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    • 专利摘要:
    The invention relates to a structure (1) of the avalanche photodiode type. The structure (1) comprises a first P-doped semiconductor zone; a second multiplication semiconductor zone adapted to provide predominant multiplication for the electrons; a fourth semiconductor zone (40), called P-doped collection zone, one of the first and second semiconductor zone (10, 20) forming an absorption zone. The structure (1) further comprises a third semiconductor zone (30) arranged between the second semiconductor zone (20) and the fourth semiconductor zone (40). The third semiconductor zone (30) is configured to present in operation an electric field capable of providing an acceleration of the electrons between the second semiconductor zone (20) and the fourth semiconductor zone (40) without multiplication of carriers by impact ionization.
    公开号:FR3053837A1
    申请号:FR1656581
    申请日:2016-07-08
    公开日:2018-01-12
    发明作者:Johan Rothman
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    DESCRIPTION
    TECHNICAL AREA
    The invention relates to avalanche photodiodes and more specifically relates to avalanche photodiodes adapted to operate in the microwave range.
    PRIOR STATE OF THE ART
    The optoelectronics industry is currently looking for avalanche photodiodes to receive an optical signal modulated in the microwave ranges. In fact, avalanche photodiodes generally have a bandwidth which is limited by their response time and are therefore not able to perceive modulations of optical signals in the microwave range.
    By modulation in the microwave range, it should be understood here and in the rest of this document, the modulations of optical signals with a frequency greater than or equal to 1 GHz, this being able to range from 1 GHz to 10 GHz, or even 1 GHz, or even 1 GHz up to 100 GHz, or even 1 GHz up to 200 GHz.
    To improve the bandwidth of avalanche photodiodes, it is known from the work of Ning Duan and his co-authors published in the scientific journal "I.E.E.E Photonics Technology Letters" volume 17, number 8, pages 1719 to 1721 in
    2005, to integrate, upstream and downstream of the absorption layer, additional layers to accelerate the injection of carriers generated during absorption.
    Thus, the structure of the photodiode type disclosed by Ning Duan, the latter being intended to receive electromagnetic radiation in a first range of wavelengths, comprises:
    a first P-doped upstream zone having a band prohibited to be transparent to the first range of wavelengths (layers of InAIAs denoted P +), a second semiconductor zone, called absorption, also P-doped with a concentration of carriers lower than that of the first zone, the semiconductor material in which said second zone is formed having a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation (InGaAs layer), a third P-doped charge zone with a concentration of majority carriers greater than that of the second zone, said third zone comprising a respective first and second layer of InAIAs and InGaAlAs, a fourth semiconductor zone, called multiplication zone, comprising two layers of InGaAlAs and InAIAs unintentionally doped, the third zone also participating in the multiplication,
    - A fifth semiconductor zone, called the collection zone, said fifth zone being doped N.
    Thus this structure differs from a structure of the avalanche photodiode type by the presence of the first and the third zone which make it possible to generate an electric field to accelerate the injection in the multiplication zone the carriers generated in the layer of absorption upon reception of electromagnetic radiation.
    Such a structure thus has an optimized response time and makes it possible to significantly increase the bandwidth with respect to a conventional structure since it makes it possible to envisage the use of optical signals modulated at frequencies which may be higher than 10 GHz. Such a structure does not make it possible to achieve truly significant gains, that is to say greater than 10, for optical signals modulated at frequencies greater than 10 GHz. It will also be noted that such a structure has a variable bandwidth as a function of the gain and therefore that this frequency of 10 GHz can only be reached for relatively small gains, which limits its applications.
    In parallel to the work of Ning Duan and his co-authors, we can also cite the work on structures of the avalanche photodiodes type with multiplication of a given type of carrier. These structures have a configuration such that only the carriers of a single type, generally the electrons, are multiplied during their passage through the multiplication zone. The work of J. Rothman and his co-authors published in the scientific journal "Journal of Electronic Material" volume 43 number 8 pages 2947-2954 in 2014 has shown that this multiplication of selective carriers allows to obtain strong gains without the bandwidth being negatively influenced. Thus, it is possible to obtain with such structures significant bandwidths even for high gains.
    The bandwidth of these structures with selective multiplication nevertheless remains too low for microwave applications. Indeed, as shown by J. Rothman and his co-authors, it is currently not possible to envisage with such structures the use of optical signals modulated at frequencies above 10 to 20 GHz.
    STATEMENT OF THE INVENTION
    The invention aims to remedy these drawbacks and thus aims to provide a structure of the avalanche photodiode type capable of receiving optical signals with modulations at frequencies included in the microwave range this with a significant gain in order to allow practical applications in the microwave range.
    To this end, the invention relates to a structure of the avalanche photodiode type intended to receive electromagnetic radiation in a first range of wavelengths, the structure comprising:
    a first semiconductor zone of a first type of conductivity having a first face intended to receive electromagnetic radiation and a second face opposite to the first face, a second semiconductor zone, called multiplication zone, in contact with the second face of the first semiconductor zone and having a concentration of majority carriers lower than that of the first semiconductor zone, the second semiconductor zone being shaped to provide a multiplication of carriers by impact ionization which is predominant for the electrons,
    a fourth semiconductor zone, called the collection zone, the fourth semiconductor zone being of a second type of conductivity for which the majority carriers are the electrons and having a concentration in majority carriers greater than that of the second semiconductor zone, at least the one of the first and the second semiconductor zone being formed in a semiconductor material having a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation, the structure further comprising a third and a fifth semiconductor zone arranged between the second semiconductor zone and the fourth semiconductor zone, the third semiconductor zone comprising a concentration of majority carriers lower than that of the first, fourth and fifth semiconductor zones, the fifth semiconductor zone being of the second type of conductivity and comprising a concentration there are majority carriers greater than that of the second semiconductor zone so as to create in the third semiconductor zone an electric field without multiplication of carriers by impact ionization
    With such an electric field in the third semiconductor zone, the drift of electrons in the third zone is much greater than in that of the semiconductor multiplication zone which is greatly reduced due to the multiplication of carriers. Such a rapid drift of electrons in the third semiconductor zone makes it possible to accelerate the separation of charges in the junction and, consequently, the evacuation of charges and the supply of an electronic response dominated by the contribution of electrons. However, this contribution of the electrons being greater in speed than that of the holes by a factor of at least 3, the increase in the bandwidth of the structure vis-à-vis the prior art is significant. This increased bandwidth is, moreover, not degraded by a significant gain in multiplication, since the zone of multiplication of the structure is adapted to offer a multiplication of carriers by ionization by preponderant impact for the electrons.
    Such a structure therefore makes it possible to envisage microwave applications because of its optimized response time even for high gains.
    It is understood above and in the rest of this document, by “multiplication of carriers by impact ionization which is predominant for a type of carriers” that the multiplication of carriers by impact ionization of one of the types of carriers is negligible with regard to the multiplication of carriers by impact ionization of the other type of carriers, that is to say that the ratio between the two multiplication rates is greater than 10, preferably 100, even 1000.
    Of course, the structure is considered, above and in the rest of this document, in operation when it is subjected to a polarization comprised within a nominal operating voltage range, such as a polarization comprised between 5 V and 15 V, or even between 11V and 13 V.
    The second semiconductor zone can be formed in the semiconductor material which has a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation.
    With such a configuration, the absorption and the multiplication of 20 carriers taking place in the same semiconductor zone, the response time, and therefore the bandwidth of the structure, are particularly optimized.
    The first semiconductor zone can be formed in the semiconductor material which has a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation.
    Such a structure has a contained multiplication noise since the absorption of photons and the multiplication of carriers are separate, while being able to receive optical signals with modulations at frequencies included in the microwave range, since it benefits from the advantages related to the invention.
    The fifth semiconductor zone may comprise a concentration of majority carriers adapted so that the fifth semiconductor zone is depleted in operation of the structure.
    In this way, it is possible to generate an electric field 5 sufficient in the third semiconductor zone to optimize the drift of the electrons with a relatively small thickness of the fifth semiconductor zone. The response time of the structure can thus be little, if at all, influenced by the presence of the fifth semiconductor zone.
    Above and throughout the rest of this document is meant by depleted semiconductor zone the fact that this latter zone has been emptied of these carriers due to the electric field present in the structure, such depleted semiconductor zones being generally associated with a zone space charge of the structure.
    The third semiconductor zone can be of the second type of conductivity.
    The second semiconductor zone can be of the second type of conductivity.
    The structure may further comprise a semiconductor junction which extends along a junction plane, the second and third semiconductor zones each having a thickness in a direction transverse to said junction plane, and the thickness of the third semiconductor zone can be greater than that of the second semiconductor zone, the thickness of the third semiconductor zone being preferably greater than twice that of the second semiconductor zone.
    With such a thickness of the third semiconductor zone, the influence of the optimized electron drift over the entire thickness of the third semiconductor zone is significant on the response time of the structure and makes it possible to compensate for the travel time of the carriers in the second semiconductor zone.
    By thickness of a semiconductor zone, it should be understood, above and in the rest of this document, the average dimension of a zone
    Ί semiconductor in a direction substantially transverse to the junction of the structure.
    the third semiconductor zone may include a band gap less than that of the semiconductor material having a band gap adapted to promote the absorption of electromagnetic radiation in which at least one of the first and the second semiconductor zone is formed, the third semiconductor zone preferably comprising a forbidden bandwidth less than that of the first, second, fourth and fifth semiconductric zone.
    With a relatively small forbidden bandwidth with respect to that of the first semiconductor zone, the electron saturation speed in the third semiconductor zone is thereby optimized with respect to that in the first semiconductor zone and in the second semiconductor zone.
    The first and second semiconductor zones can be integrated into a semiconductor layer, the semiconductor layer comprising a first face and a second face, a first portion of the semiconductor layer extending from a part of the first face forming the first semiconductor zone, the rest of the semiconductor layer forming the second semiconductor zone.
    The third and fourth semiconductor zone can be integrated into a semiconductor layer, the semiconductor layer comprising a first portion forming the fourth semiconductor zone and the rest of the semiconductor layer forming the third semiconductor zone.
    Such arrangements of two semiconductor zones in a semiconductor layer make it possible to delimit the structure spatially without requiring an etching operation such as the arrangement of a mesa.
    Each of the first to the fifth semiconductor zone can be formed by a respective semiconductor layer, the semiconductor zones being brought into contact with one another by the faces of the semiconductor layers forming them.
    Such a planar structure has the advantage of being easy to manufacture, the structure being able to be manufactured by successive deposition of the layers forming each of the semiconductor zones.
    At least a part of the semiconductor layers forming first to fifth semiconductor zones can be delimited spatially by the walls of a mesa.
    Such spatial delimitation by the walls of a mesa makes it possible to eliminate any risk of crosstalk and also makes it possible to control the active areas of the structure in which noise is likely to be generated.
    The invention further relates to a method for manufacturing a structure of the avalanche photodiode type, the method comprising the following steps:
    supply of a first semiconductor zone of a first type of conductivity for which the majority carriers are the holes, and having a first face intended to receive electromagnetic radiation and a second face opposite to the first face, supply of a second zone semiconductor, called multiplication, the second semiconductor zone having a concentration of majority carriers lower than that of the first semiconductor zone, said second semiconductor zone being adapted to provide a multiplication of carriers by impact ionization which is predominant for the electrons, the steps for supplying the first and the second semiconductor zone being produced so that the second semiconductor zone is in contact with the second face of the first semiconductor zone, at least one of the first and the second semiconductor zone being formed in a materia u semiconductor having a forbidden bandwidth adapted to favor the absorption of electromagnetic radiation, supply of a third semiconductor zone and a fifth semiconductor zone, supply of a fourth semiconductor zone, called of collection, said fourth semiconductor zone being of a second type of conductivity for which the majority carriers are the electrons, and having a concentration in majority carriers greater than that of the second semiconductor zone, in which the steps of supplying the third and the fifth semiconductor zone being carried out so that the third and fifth semiconductor zones are arranged between the second semiconductor zone and the fourth semiconductor zone, the third semiconductor zone having a concentration in majority carriers lower than that of the first, fourth and fifth semiconductor zones trices and the fifth semiconductor zone being of the second type of conductivity and comprising a concentration of majority carriers higher than that of the second semiconductor zone so as to create in the third semiconductor zone an electric field without multiplication of carriers by impact ionization.
    Such a method allows the manufacture of a structure benefiting from the advantages linked to the invention.
    The step of supplying the first zone may be prior to the steps of supplying the second, third, fourth and fifth semiconductor zone, the respective and successive stages of supplying the second, fifth, third and fourth zones semiconductors each consisting of a step of forming said zone in contact with the semiconductor zone formed previously, the second semiconductor zone being formed in contact with the first semiconductor zone.
    The step of supplying the fourth zone may be prior to the steps of supplying the first, second, third and fifth semiconductor zone, the respective and successive steps of supplying the third, possibly fifth, second and first semiconductor zones (30, 50 , 20, 10) each consisting of a step of forming said zone in contact with the previously formed semiconductor zone, the third semiconductor zone being formed in contact with the fourth semiconductor zone.
    ίο
    Such methods make it possible to fabricate in a simple manner a structure benefiting from the advantages linked to the invention.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of exemplary embodiments, given for purely indicative and in no way limiting, with reference to the appended drawings in which:
    Figure 1 is a schematic sectional view of a structure according to a first embodiment of the invention compared with the variations of the electric field and the bandwidth prohibited along its thickness, Figures 2A and 2B respectively illustrate the standard electronic response curve of a structure of the prior art and that of a structure according to the first embodiment of the invention, FIG. 3 schematically illustrates a practical design of the structure illustrated in FIG. 1 in which the structure is inscribed in a mesa, FIG. 4 schematically illustrates a second practical design of the structure illustrated in FIG. 1 in which the structure is planar, FIG. 5 is a schematic cross section of a structure according to a second embodiment of the invention compared with the variations of the electric field and the bandwidth prohibited along its thickness, FIG. 6 illustrates the standard electronic response curve of a structure according to the second embodiment, FIG. 7 illustrates a schematic cross section of a structure according to a third embodiment of the invention in which the zones semiconductor absorption and multiplication are confused.
    he
    Identical, similar or equivalent parts of the different figures have the same reference numerals so as to facilitate the passage from one figure to another.
    The different parts shown in the figures are not necessarily on a uniform scale, to make the figures more readable.
    The different possibilities (variants and embodiments) must be understood as not being mutually exclusive and can be combined with one another.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    FIG. 1 schematically illustrates a structure 1 of the avalanche photodiode type according to a first embodiment of the invention which is capable of receiving optical signals modulated in the microwave range. Such optical signals are electromagnetic radiation in a range of wavelengths having a varying intensity at a frequency included in the range of microwaves, this variation being generally representative of information to be received.
    The invention relates mainly to structures of the avalanche photodiode type for which the multiplication of carriers by impact ionization is predominant for a single type of carrier, the electrons. When designing the structures described in the following embodiments, the choice of material focused on mercury-cadmium tellurides of the Cd x Hgi- x Te type. In such structures, the first type of conductivity corresponds to the type of conductivity for which the majority carriers are the holes, that is to say P doping, while the second type of conductivity corresponds to the type of conductivity for which the majority carriers are the electrons, i.e. at N doping
    It may be noted that the terminology of “mercury-cadmium telluride” used above and in the rest of this document should be understood as corresponding to the compounds comprising tellurium and at least one element chosen from cadmium and mercury such as compounds respecting the following formulation
    CdxHgi-xTe with the value x corresponding to the proportion of cadmium relative to mercury and is therefore between 1 and 0.1 and 0 inclusive.
    However, the invention is not limited to the only structures produced from mercury-cadmium tellurides and also encompasses any type of structure whose design makes it possible to obtain a preponderant multiplication for a single type of carrier, which is advantageously the electrons. . Thus, if in the embodiments described below, the various semiconductor zones are produced in mercury-cadmium tellurides, the skilled person can easily, on the basis of this teaching, provide structures according to the invention, the semiconductor zones would be produced for example in indium arsenides-antimonides of the lnAsi- x Sb x type .
    It may be noted that the terminology of “indium arsenide-antimonide” used above and in the rest of this document should be understood as corresponding to the compounds comprising indium and at least one element chosen from arsenic and antimony such as the compounds respecting the following formulation lnAsi-χ Sb x with the value x corresponding to the proportion of antimony relative to arsenic and is therefore between 1 and 0.1 and 0 inclusive.
    It will also be noted that if the structure 1 has semiconductor zones produced from a single type of material such as mercury cadmium tellurides and indium arsenide-antimonides, it is also conceivable that a structure according to the invention has zones semiconductors produced in several types of material and this in particular by the presence of a substrate in a material of another type. Thus, for example, a structure having its "functional" zones produced in mercury-cadmium tellurides can comprise a support produced in zinc-cadmium telluride CdZnTe.
    For convenience and for the sake of simplification, the first type of conductivity for which the majority carriers are holes is referred to in the rest of this document, in accordance with the understanding of those skilled in the art, P doping. Similarly way, the second type of conductivity for which the majority carriers are holes is called in the rest of this N doping document.
    Finally, the embodiments described below are particularly aimed at the detection and measurement of electromagnetic radiation whose wavelength is included in the range of near infrared wavelengths. Thus the values and the materials which are cited above relate particularly to the detection and measurement of electromagnetic radiation whose wavelength is included in the wavelength range of the near infrared. Of course, the values and the materials relating to this application are only given by way of illustration and are not limiting. Those skilled in the art are in fact able, on the basis of this teaching, to adapt the values and / or materials described for applications to other ranges of wavelengths.
    Above and in the rest of this document is meant by range of near infrared wavelengths a range of wavelengths between 1.5 μm and 5 μm.
    The structure 1 illustrated in FIG. 1 comprises:
    a first semiconductor zone 10, called absorption zone, P doped having a first face intended to receive the electromagnetic radiation λ and a second face opposite to the first face, the semiconductor material in which said first semiconductor zone 10 having a width of forbidden band adapted to favor the absorption of electromagnetic radiation, a second semiconductor zone 20, called multiplication zone, in contact with the second face of the first semiconductor zone 10, the second semiconductor zone 10 being doped N and having a concentration in majority carriers lower than that of the first semiconductor zone 10, said second semiconductor zone 20 being adapted to provide a multiplication of carriers by impact ionization which is preponderant for the electrons, a fifth semiconductor zone 50, called charge, in contact with the second zone semiconductor rice 20 opposite to the first semiconductor zone 10, the fifth zone being doped N and having a concentration in majority carriers higher than that of the second semiconductor zone 20, a third semiconductor zone 30, called acceleration zone, in contact with the fifth semiconductor zone 50 opposite the second semiconductor zone 20, said third semiconductor zone 30 being N-doped and having a concentration in majority carriers lower than that of the first and fifth semiconductor zone 10, 50 and similar to that of the second semiconductor zone 20, a fourth semiconductor zone 40, called the collection zone, in contact with the third semiconductor zone 30, said fourth semiconductor zone 40 being of a second type of conductivity opposite to the first type of conductivity and having a higher majority carrier concentration to that of the second semiconductor zone 20.
    If in this first embodiment the second and the third semiconductor zone 20, 30 are of the same type of conductivity, it is also conceivable that the second and the third semiconductor zone 20, 30 have opposite types of conductivity. Thus, according to this variant of this first embodiment, the second semiconductor zone 20 has P-type doping while the third semiconductor zone 30 has N-type doping. Of course, it is also possible as a variant, without the It is beyond the scope of the invention that the second semiconductor zone 20 has N-type doping and the third semiconductor zone P doping, or even that the second and third semiconductor zones 20, 30 both have P doping.
    With such a configuration of the third semiconductor zone, this being disposed between the fifth semiconductor zone and the fourth semiconductor zone and having a low majority carrier concentration with respect to the first and fourth semiconductor zone 10, 40, the third semiconductor zone 30 is configured to present in operation of the structure 1 an electric field capable of providing a rapid drift of electrons between the second and the fourth semiconductor zone 20, 40. In such a configuration, the third semiconductor zone 30 also has a configuration adapted by a concentration of majority carriers and an adequate dimensioning so that the latter third semiconductor zone 30 is free of multiplication of carriers by impact ionization in operation of the structure 1
    Thus, as illustrated in FIG. 1, the first semiconductor zone 10 is in the form of a semiconductor layer formed in a mercury-cadmium telluride of the Cd x Hgi- x Te type with the value x corresponding to the proportion of cadmium compared to mercury, the proportion of cadmium being adapted to correspond to the range of wavelengths and thus ensure absorption of electromagnetic radiation.
    For example, for wavelength ranges corresponding respectively to wavelengths less than 3.7 pm and 1.8 pm, the proportion of cadmium x can be chosen to be less than or equal to 0.33 and 0 respectively , 55 for operation at a temperature of 300K.
    According to the possibility illustrated in FIG. 1, as the variation of band gap 82 shown on the right under the reference Eg shows, the band gap width can be reduced in the direction of the second semiconductor zone, this nevertheless being sufficient for allow the absorption of electromagnetic radiation λ in the wavelength range even when the prohibited bandwidth is maximum. Thus, according to this possibility and the examples given in the previous paragraph, the proportion of cadmium remains over the entire thickness of the first semiconductor zone 1 less than or equal to 0.33 and 0.55 for wavelength ranges corresponding respectively to wavelengths less than 3.7 pm and 1.8 pm.
    The concentration of majority carriers in the first semiconductor zone 10 is preferably between 10 16 and 10 17 cm 3 . Such a concentration of majority carriers can be provided by doping elements, such as arsenic As, gold Au or even antimony Sb, adapted to each give at least one hole when they are activated. The thickness of the layer forming the first semiconductor zone in a direction substantially transverse to the semiconductor junction is between 0.5 and 2 μm.
    It may be noted that, as a variant of the possibility of variation of bandwidth prohibited in the first semiconductor zone 10, it is also conceivable within the framework of the invention and according to a possibility not illustrated, that this is the concentration of majority carriers which is varied along the thickness of the first semiconductor zone 10. Of course, according to another possibility of the invention not illustrated, the first semiconductor zone can comprise both a variation of the concentration of cadmium and of majority carriers on its thickness. Such possibilities are particularly advantageous for allowing accelerated transfer of the electron from each of the electron-hole pairs generated during the absorption of the photons of the electromagnetic radiation λ by the first semiconductor zone.
    10.
    The first semiconductor zone 10 has a first and a second face, the first face being intended to receive the electromagnetic radiation λ.
    The second semiconductor zone 20 is in the form of a semiconductor layer having a first and a second face. The second semiconductor zone 20 has its first face in contact with the second face of the first semiconductor zone 10.
    The second semiconductor zone 20 is doped N is present a concentration in majority carriers lower than that of the first semiconductor zone 10. This second semiconductor zone 20 is adapted to provide in operation of the structure a multiplication of carriers by impact ionization which is preponderant , or even unique, for the electrons. Such a selective multiplication of electrons only is an intrinsic property of mercurecadmium tellurides of the Cd x Hgi- x Te type with the value x corresponding to the proportion of cadmium relative to mercury. Indium arsenides-antimonides of the lnAsi- x Sb x type . also have such an intrinsic property of selective multiplication of electrons only.
    It may be noted that according to a variant of the invention, it is also possible to provide such selectivity of multiplication by impact ionization by a succession of suitable semiconductor zones of materials not having such an intrinsic property. Since the invention does not have the object of obtaining a multiplication by selective impact for electrons, this possibility, known to those skilled in the art, this variant covered by the invention is not described in more detail in this document.
    The concentration of majority carriers and the thickness of the layer forming the second semiconductor zone 20 are preferably optimized to obtain a maximum multiplication gain of carriers and a travel time of the electrons in the minimum second zone while having a contained tunnel current.
    To obtain such an adaptation, the second semiconductor zone 20 comprises a concentration of majority carriers which is preferably 10 times lower than that of the first semiconductor zone and very advantageously 50 times lower. Thus the second semiconductor zone may have a concentration of majority carriers less than 10 15 cnv 3 , or even 2 × 10 14 cm 3 .
    The second semiconductor zone 20 may have a thickness of between 0.3 and 2 μm and preferably between 0.4 and 1 μm. As illustrated by variation of the prohibited band 82 shown on the right of FIG. 1 under the reference Eg, the width of the prohibited band is preferably chosen to be in continuity with that of the first semiconductor zone 10 at its second face. The proportions of cadmium at the interface between the first and the second semiconductor zone 10, 20 are therefore identical between these two same zones 10, 20.
    The fifth semiconductor zone 50 is in the form of a semiconductor layer comprising a first and a second face. The fifth semiconductor zone 50 has its first face in contact with the second face of the second semiconductor zone 20.
    The fifth semiconductor zone 50 is N-doped and has a concentration of majority carriers greater than that of the second semiconductor zone 20. The concentration of majority carriers of the fifth zone 50 is preferably greater by a factor of 10, and preferentially by a factor 100, at the concentration of majority carriers in the second semiconductor zone20.
    However, it is preferable to avoid any disturbance in the functioning of the structure 1 that the concentration of majority carriers of the fifth semiconductor zone 50 is such that the fifth semiconductor zone is depleted in operation of the structure 1. Such a concentration of majority carriers can be supplied by doping elements, such as aluminum Al, indium In or even gallium, adapted to each give at least one electron when they are activated. The thickness and the level of doping of the fifth semiconductor zone 50 is adapted to provide an electric field, as illustrated in FIG. 1 under the reference 81, in the semiconductor zone 30 maximizing the speed of drift of the electrons in the zone 30 without induce a multiplication in this area. The thickness of this semiconductor zone 50 has a preferably small thickness, that is to say less than 0.5 μm, in order to minimize its contribution to the response time. The thickness of the semiconductor zone 50 is typically less than 0.2 pm, or even less than 0.1 pm.
    As illustrated by the band gap variation 82 shown on the right of FIG. 1 under the reference Eg, the band gap width is preferably chosen to be continuous with that of the second semiconductor zone 20. Thus the proportions of cadmium in the second and fifth semiconductor zone 20, 50 are therefore identical in this first embodiment.
    The third semiconductor zone 30 is in the form of a semiconductor layer comprising a first and a second face. The third semiconductor zone 30 has its first face in contact with the second face of the fifth semiconductor zone 50.
    The third semiconductor zone is doped N. It has a concentration of majority carriers lower than that of the first, fourth and fifth semiconductor zone 10, 40, 50 and which is of the same order of magnitude as that of the second semiconductor zone 20. Thus the concentration of majority carriers in the third semiconductor zone may be less than 10 15 cm 3 , or even 2 × 10 14 cm 3 .
    According to an advantageous possibility of the invention, the concentration of majority carriers in the third semiconductor zone 30 is lower than that of the second semiconductor zone 20. Thus, ideally, the third zone has a concentration of majority carriers of the unintentionally doped type , or of the same order of magnitude as doping of the unintentionally doped type. Such a possibility makes it possible to optimize the acceleration of the electrons between the second and the fourth semiconductor zone 20, 40 without multiplication by impact ionization.
    The third semiconductor zone 30 has a thickness preferably greater than that of the second semiconductor zone 20. More precisely, the thickness of the third semiconductor zone can preferably be chosen to be greater by a factor of 2 than that of the second semiconductor zone 20, or even a factor of 3 greater than that of this same second semiconductor zone 20.
    Thus the third semiconductor zone 30 can have a thickness of between 0.6 and 6 μm and preferably between 0.8 and 3 μm. As illustrated by the band gap variation 82 shown on the right of FIG. 1 under the reference Eg, the band gap width is preferably chosen to be identical to that of the fifth semiconductor zone 50. The proportions of cadmium of the fifth and of the third semiconductor zone 50, 30 are therefore identical.
    The fourth semiconductor zone 40 is in the form of a semiconductor layer comprising a first and a second face. The fourth semiconductor zone 40 has its first face in contact with the second face of the third semiconductor zone 30.
    The fourth semiconductor zone 40 is doped N. The fourth semiconductor zone 40 has a concentration of majority carriers greater than 10 16 cm 3 which can be of the same order of magnitude as, or even greater than, that of the first semiconductor layer 10. Thus the fourth semiconductor zone can comprise a concentration of majority carriers between 10 16 and 10 18 cm 3 . The thickness is typically greater than 0.5 μm, or even greater than 1 μm.
    This structure makes it possible, under reverse polarization in an avalanche configuration, to create an electric field in order to accelerate the electrons between the multiplication layer, that is to say the second semiconductor zone 20, and the collection layer. , that is to say the fourth semiconductor zone 40, so as to optimize the contribution of the electrons relative to that of the holes.
    In order to illustrate the advantages of such a structure, FIGS. 2A and 2B make it possible to compare the expected electronic response times for an optimized prior art structure and for a structure according to the first embodiment of the invention. The response curves thus presented in FIGS. 2A and 2B were obtained according to the “impulse response model” method described in the article by G. PERRAIS et al. published in the scientific journal "Journal of Electronic Materials" Volume 38 No. 8 page 1790 to 1799.
    To make these structures comparable, the structure of the prior art and the structure according to the first embodiment of the invention, the response times of which are illustrated in FIGS. 2A and 2B present absorption, multiplication and collection zones with configurations. identical.
    FIG. 2A graphically illustrates the curve 201 of electronic response of an avalanche type structure comprising the two additional layers to accelerate the injection of the carriers generated during the absorption described by Ning Duan and his co-authors. We can see in this figure 2A that the transmitted current has two components 211 and 212, a first component 211 corresponds to the contribution of the electrons after the absorption of the electromagnetic radiation λ in the absorption zone, their multiplication in the multiplication zone and their collection, and a second component 212 corresponding to that of the holes generated in the multiplication layer during the passage of the electrons. We can thus see in this structure of the optimized prior art that, if the electrons make it possible to obtain a fast signal with an average transit speed of the electrons in the multiplication layer of 3.10 6 cm.s 1 which is compatible with the microwave applications, their contribution integrated over time is negligible compared to that corresponding to the holes. However, the average transit speed of the holes is only lK ^ cm.s 1 and the response is perceived over a period of 60-65 ps, extending up to 80 ps. Thus, such a structure according to the prior art only suggests that a bandwidth reaching 9 GHz.
    The structure according to the first embodiment of the invention, the response time of which is illustrated in FIG. 2B, so as to provide results comparable to those illustrated in FIG. 2A, was chosen with a third semiconductor zone 30 having dimensions identical to that of the acceleration layer of the structure of the prior art. The third semiconductor zone 30 is 2 and a half times thicker than the multiplication zone (1.5 μm), has a doping of a doping of 10 17 cm -3 and a drift speed is estimated at l × 10 7 cm / s. A higher drift speed in this area is justified by the absence of multiplication which tends to reduce it. It can be seen in FIG. 2B, that for a structure according to the invention, the transmitted current also has two components 211 and 212, the first corresponding to the contribution of the electrons and the second to that of the holes. However, with a structure according to the invention, the component 211 corresponding to the electrons, when it is integrated over time, is preponderant compared to the component 212 corresponding to the holes. Indeed, the rapid passage of electrons in the third semiconductor zone 30 makes it possible to initiate charge evacuation in the latter which significantly increases the contribution of the electrons. Thus, the component of the electrons 211 being significantly larger than that of the holes, the reading circuit associated with the structure will not be influenced mainly by the contribution of the electrons and the signal is perceived, as shown in FIG. 2B, over a shorter duration at 20 ps, with a response that therefore extends to 40 ps. Thus, such a structure according to the invention suggests a bandwidth of up to 20 GHz.
    FIG. 3 illustrates a first practical example of a structure 1 according to the invention in a configuration of the mesa type. Such a structure therefore comprises, in addition to the semiconductor zones 10, 20, 30, 40, 50:
    a delimitation of the mesa type, the structure 1 having been etched to delimit its active region, a first metallization 61, a second offset metallization not being shown in FIG. 3, in order to apply the operating voltages of the structure 1 and recovering the signal, the first and second metallization 61 being disposed in contact with the first face of the first semiconductor zone 10, the second metallization being in ohmic contact with the fourth semiconductor zone 40 by means, for example of a via , a passivation layer 71, disposed on the first face of the first semiconductor zone 10 and the second face of the fourth semiconductor zone 40 so as to protect the surface portions not coated with the first and second metallization 61, part of the passivation layer also protects the etching flanks released during the etching of the structure 1 to form the mesa.
    Of course, according to a variant not illustrated, the first semiconductor zone 10 can be supported by a substrate present opposite the second semiconductor zone 20. According to this variant, the first face of the first semiconductor zone 10 is in contact with the substrate and therefore does not require a passivation layer 71.
    The first metallization 61 and the second remote metallization are both made of a preferably metallic conductive material, suitable for forming ohmic contact with the first and the fourth semiconductor zone 10,40 respectively.
    Regarding the first metallization 61, the latter is preferably configured to occupy a minimum surface on the first face of the first semiconductor zone 10 this so as to allow optimized penetration of the electromagnetic radiation λ into the first semiconductor zone
    10. Thus, for the practical example illustrated in FIG. 3, the first metallization is arranged on the periphery of the first face of the first semiconductor zone 10. According to another possibility of the invention, the first metallization can be carried out at at least partially in a conductive material, such as indium tin oxide, or ITO, which is transparent to electromagnetic radiation λ. According to this possibility, the first metallization 61 can cover a major part of the surface of the first face of the first semiconductor zone 10.
    Regarding the second metallization, it can be arranged on the first face and brought into ohmic contact with the fourth semiconductor zone by means of a metallic via arranged in a breakthrough.
    The surfaces of the free metallization semiconductor zones are passivated by the passivation layer 71 this in order to protect them from chemical, mechanical and / or electrical degradation. Such a passivation layer 71 is preferably formed in an insulating material, such as for example silicon oxide.
    Such a structure 1 according to this first practical example according to the invention can be formed by means of a manufacturing process comprising the following steps:
    supply of the first P-doped semiconductor zone 10 and having a first face intended to receive the electromagnetic radiation λ and a second face opposite to the first face, the semiconductor material in which said first semiconductor zone 10 having a suitable bandwidth is formed to promote the absorption of electromagnetic radiation λ, formation of the second semiconductor zone 20 in contact with the second face of the first semiconductor zone 10, the second semiconductor zone 20 being N-doped and having a concentration in majority carriers lower than that of the first semiconductor zone 10, said second semiconductor zone 20 being adapted to provide a multiplication of carriers by impact ionization which is preponderant for the electrons, formation of the fifth semiconductor zone 50 in contact with the second semiconductor zone 20 on a fac e of the latter which is opposite to the first semiconductor zone 10, the fifth semiconductor zone being N-doped and having a concentration of majority carriers greater than that of the second semiconductor zone 20 and which is adapted to be depleted in operation of the structure , formation of the third semiconductor zone 30 in contact with the fifth semiconductor zone 50 on a face of the latter which is opposite to the second semiconductor zone 20, the third semiconductor zone 30 being N-doped and having a concentration in majority carriers lower than that of the first zone and of the fifth semiconductor zone 10, 50, said third semiconductor zone 30 being configured to present in operation an electric field capable of providing an acceleration of the electrons between the second and the fourth semiconductor zone 20.40 without multiplication of carriers by ionisat impact ion, formation of the fourth semiconductor zone 40 in contact with the third semiconductor zone 30 on a face of the latter which is opposite to the fifth semiconductor zone 50, said fourth semiconductor zone 40 being N-doped and having a concentration of majority carriers greater than that of the second and third semiconductor zone 20, 30, partial etching of the fourth, third, fifth, second zone 40, 30, 50, 20 so as to reach the first semiconductor zone 10 and to form a mesa, formation of the first and second metallization 61 in ohmic contact of the first and fourth semiconductor zone, passivation of the surfaces of the first and fourth semiconductor zone 10, 40 free of metallization 61 and on the flanks of the mesa by means of a passivation layer 71.
    The steps of providing and forming an area, such as providing the first semiconductor area 10 or forming the second semiconductor area 20, can be performed by epitaxy deposition such as molecular beam epitaxy or vapor phase epitaxy. With such methods, it is possible to form the different semiconductor zones by varying during the deposition step, in the case where the structure is formed of mercurecadmium tellurides, the proportion of cadmium relative to mercury, the type of the elements. dopants and their concentration. Of course, a step of forming a given semiconductor area makes it possible to supply said semiconductor area and therefore also corresponds to a step of providing this same semiconductor area.
    Of course, the order of the steps of the manufacturing process described above is given only by way of example and it is also possible that certain steps are carried out before or after the order provided.
    It will thus be noted for example that it is perfectly possible in the context of such a manufacturing method to provide a first step of supplying the fourth semiconductor zone 40. In a method according to this possibility, the step of supplying the fourth semiconductor zone 40 will be followed by the steps of forming the third semiconductor zone 30, forming the fifth semiconductor zone 50, forming the second semiconductor zone 20 and forming the first semiconductor zone 10. Likewise, the the etching step can then consist in carrying out a partial etching of the first, second, fifth and fifth semiconductor zone 10, 20, 50, 30 so as to reach the fourth semiconductor zone and to form the mesa.
    FIG. 4 illustrates a second practical example of a structure 1 according to the first embodiment of the invention in which the structure 1 has a so-called planar configuration, the active area of such a structure 1 being delimited by the shape of the first semiconductor zone 10.
    The structure 1 according to this second practical example differs from a structure 1 according to the first embodiment of the invention illustrated in FIG. 1 and the first practical example of the invention, in that the first semiconductor zone 10 does not take not the shape of a semiconductor layer but the shape of an overdoped zone inscribed in a semiconductor layer in which the second semiconductor area 20 is formed.
    Thus according to this second practical example of the first embodiment, the second semiconductor zone 20 and the first semiconductor zone 10 is in the form of a single semiconductor layer in which a first portion forms the first semiconductor zone 10 and the rest of the layer forms the second semiconductor zone 20. The semiconductor layer forming the first and second semiconductor zone 20 has a first and a second face, the second face corresponding to that by which the second semiconductor zone 20 is in contact with the fifth semiconductor zone 50. The first portion forming the first semiconductor zone 10 extends from the first face of the semiconductor layer so that part of the first face of the layer forming the second semiconductor zone 20 forms the first face of the first semiconductor zone 10 which is intended to receive the radiation t electromagnetic.
    According to a variant not illustrated and a principle similar to this second practical example, the third semiconductor zone 30 and the fourth semiconductor zone 40 can be in the form of a single semiconductor layer in which a first portion forms the fourth semiconductor zone 40 and the rest of the layer forms the third semiconductor zone 30.
    With regard to the dimensioning of such a structure, it will be noted that with the configuration of the first and second semiconductor zone 10, 20 according to this second practical example, the thicknesses of the first and of the second semiconductor zone correspond respectively to l average thickness of the first portion and the thickness of the semiconductor layer to which the average thickness of the first portion is subtracted.
    A manufacturing process according to this second practical example differs from a manufacturing process according to the first practical example in that it:
    in place of the steps of supplying the second semiconductor zone 20 and of forming the first semiconductor zone 10, comprises a step of supplying a P-doped semiconductor layer intended to supply the first and second semiconductor zone 10, 20, the semiconductor layer having the concentration of majority carriers of the second semiconductor zone 20, and a step of implanting P-type doping elements to form the first semiconductor zone 10, does not necessarily include a step of etching an intercepting mesa zone 10, and the passivation step consists in passivating the metallization-free surface of the first face of the semiconductor layer forming the first and second semiconductor zone 10, 20 and optionally of the second face of the fourth semiconductor zone 40.
    Of course, in the same way as for the method of manufacturing a structure according to the first practical example described above, the order of the steps is given only by way of example and it is also possible that certain steps are carried out before or after the order provided.
    It is therefore also conceivable that in the context of such a manufacturing process begins with a first step of supplying the fourth semiconductor zone 40. Thus, the step of supplying the fourth semiconductor zone 40 can then be followed by the stages of forming the third semiconductor zone 30, of forming the fifth semiconductor zone 50, of forming the semiconductor layer intended to form the second semiconductor zone 20, and of implantation of the semiconductor layer to form the first semiconductor zone 10 and the second semiconductor zone 20.
    According to a variant not illustrated, the fourth semiconductor zone 40 can be supported by a substrate present opposite the third semiconductor zone 30. According to this variant, the second face of the fourth semiconductor zone 40 is in contact with the substrate and does not therefore requires no passivation layer 71.
    In the same way, it is also conceivable, in a variant not illustrated, to provide at a distance, a delimitation of the third semiconductor zone 30 for example by etching a mesa.
    FIG. 5 illustrates a structure according to a second embodiment of the invention in which the third zone has a bandwidth of low energy prohibited. Such a structure differs, as shown by the variation of the forbidden band 84 shown on the right of FIG. 5 under the reference Eg, only by the width of the forbidden band of the third semiconductor zone 30.
    In this second embodiment, the third semiconductor zone 30 has a forbidden bandwidth less than that of the other semiconductor zones 10, 20, 40, 50 this so as to present a rate of electron saturation which is greatly improved. Indeed, for a forbidden bandwidth going from 0.4 to 0.25 eV, the speed of saturation of the electrons in the acceleration layer goes from 1.10 7 cm.s 1 to 3.10 7 cm.s _1 . The effect of the electric field 83 generated by the fifth semiconductor zone 50 in the third semiconductor zone 30 is thus optimized.
    FIG. 6 makes it possible to illustrate, according to a method identical to that used for FIGS. 2A and 2B, the electronic response time expected from a structure according to this second embodiment. The configuration of the structure whose response time is illustrated in FIG. 6 is identical to that of the structure whose response time is illustrated in FIG. 2B with the only difference that the band gap of the third semiconductor zone is reduced, the latter having a proportion of cadmium x equal to 0.3 (Eg ~ 0.25 eV).
    It can be seen in FIG. 6 that the response time of the structure is significantly improved. Indeed, as for the response time illustrated in FIG. 2B, the electronic contribution 211 is predominant vis-à-vis that of the holes and is perceived over a period of 6 ps, the response extending up to 26 ps. Thus, such a structure according to this second embodiment of the invention suggests a bandwidth of up to 70 GHz.
    FIG. 7 illustrates a structure 1 according to a third embodiment of the invention in which the second semiconductor zone 20 forms both an absorption zone and a multiplication zone. Thus such a structure 1 differs from a structure 1 according to the first embodiment in that the first semiconductor zone 10 is produced in a semiconductor material transparent to electromagnetic radiation λ and in that the second semiconductor zone 20 is formed in a semiconductor material having a prohibited bandwidth adapted to promote the absorption of electromagnetic radiation λ.
    In such an embodiment and as illustrated in FIG. 7, the first semiconductor zone 10 is in the form of a semiconductor layer formed in a mercury-cadmium telluride of the Cd x Hgi- x Te type with the corresponding x value to the proportion of cadmium relative to mercury, the proportion of cadmium being adapted to correspond to the range of wavelengths and thus ensure transparency to electromagnetic radiation.
    For example, for wavelength ranges corresponding respectively to wavelengths greater than 1.4 pm and 1.2 pm, the proportion of cadmium x can be chosen to be greater than or equal to 0.66 and 0.75 respectively for a operation at a temperature of 300K.
    According to the possibility illustrated in FIG. 7, as shown by the band gap 86 shown on the right under the reference Eg, the band gap width of the first semiconductor zone 10 has a substantially constant value. Thus, according to this possibility and the examples given in the context of the first embodiment, the proportion of cadmium Est over the entire thickness of the first semiconductor zone 10 greater than 0.66 and 0.75 for ranges of lengths d 'wave corresponding respectively to wavelengths greater than 1.4 µm and 1.2 µm.
    The second semiconductor zone 20 is in the form of a semiconductor layer formed in a mercury-cadmium telluride of the Cd x Hgi x Te type with the value x corresponding to the proportion of cadmium relative to mercury, the proportion of cadmium being adapted to match the wavelength range and thus ensure absorption of electromagnetic radiation. For wavelength ranges corresponding respectively to wavelengths less than 3.7 pm and 1.8 pm, the proportion of cadmium x can be chosen to be less than or equal to 0.33 and 0.55 respectively for operation at a temperature of 300K.
    According to the possibility illustrated in FIG. 7, as the variation of the forbidden band 86 shown on the right under the reference Eg shows, the forbidden bandwidth is chosen to allow the absorption of electromagnetic radiation λ in the range of lengths of wave. Thus, according to this possibility and the examples given in the previous paragraph, the proportion of cadmium remains over the entire thickness of the first semiconductor zone 1 less than or equal to 0.33 and 0.55 for wavelength ranges corresponding respectively to wavelengths less than 3.7 pm and 1.8 pm.
    The method of manufacturing a structure according to this third embodiment differs from a method according to the first embodiment only in the composition of the first and second semiconductor zones 10, 20 during the steps of providing the latter.
    A structure 1 according to this third embodiment is particularly advantageous for applications, such as those of telecommunications, in which the operating frequencies are preferred over the signal to noise ratio of the structure. Indeed, with such a configuration, the absorption and the multiplication taking place in the same semiconductor zone, the noise due to the multiplication is thereby increased.
    Of course, the practical examples described for the first embodiment are perfectly compatible with this second and this third embodiment, the step of forming the third semiconductor zone 30 being adapted so that the latter has a lower prohibited bandwidth to the other semiconductor zones 10, 20, 40, 50 of the structure 1.
    It will also be noted, that in this second and this third embodiment, in a manner identical to the first embodiment, it is also conceivable, as a variant and without departing from the scope of the invention, that one or both of the second and third semiconductor zones have P doping instead of N doping
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    1. Structure (1) of the avalanche photodiode type intended to receive electromagnetic radiation (λ) in a first wavelength range, the structure (1) comprising:
    a first semiconductor zone (10), of a first type of conductivity for which the majority carriers are the holes, and having a first face intended to receive electromagnetic radiation (λ) and a second face opposite to the first face, a second semiconductor zone (20), called multiplication zone in contact with the second face of the first semiconductor zone (10) and having a concentration in majority carriers lower than that of the first semiconductor zone (10), the second semiconductor zone being shaped to provide a multiplication of carriers by preponderant impact ionization for the electrons, a fourth semiconductor zone (40), called the collection zone, the fourth semiconductor zone (40) being of a second type of conductivity for which the majority carriers are the electrons, and with a higher majority carrier concentration than that of the second zone semiconductor (20), at least one of the first and second semiconductor zones (10, 20) being formed in a semiconductor material having a band gap prohibited adapted to promote the absorption of electromagnetic radiation (λ), the structure (1) being characterized in that it further comprises a third and a fifth semiconductor zone (30, 50) arranged between the second semiconductor zone (20) and the fourth semiconductor zone (40), the third semiconductor zone (30 ) comprising a concentration of majority carriers lower than that of the first, fourth and fifth semiconductor zones (10, 40, 50), the fifth semiconductor zone (50) being of the second type of conductivity and comprising a concentration of majority carriers greater than that of the second semiconductor zone (20) so as to create in the third semiconductor zone (30) an electric field without mu ltiplication of carriers by impact ionization.
    [2" id="c-fr-0002]
    2. Structure (1) according to claim 1, in which the second semiconductor zone (20) is formed in the semiconductor material which has a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation (λ).
    [3" id="c-fr-0003]
    3. Structure (1) according to claim 1, wherein the first semiconductor zone (10) is formed in the semiconductor material which has a band gap width adapted to promote the absorption of electromagnetic radiation (λ).
    [4" id="c-fr-0004]
    4. Structure (1) according to any one of claims 1 to 3, in which the fifth semiconductor zone (50) comprises a concentration of majority carriers adapted so that the fifth semiconductor zone (50) is depleted in operation of the structure ( 1).
    [5" id="c-fr-0005]
    5. Structure (1) according to any one of claims 1 to 4, wherein the third semiconductor zone (30) is of the second type of conductivity.
    [6" id="c-fr-0006]
    6. Structure (1) according to any one of claims 1 to 5, wherein the second semiconductor zone (20) is of the second type of conductivity.
    [7" id="c-fr-0007]
    7. Structure (1) according to any one of claims 1 to 6, further comprising a semiconductor junction which extends along a junction plane, the second and third semiconductor zone (20, 30) each having a thickness according to a direction transverse to said junction plane, and in which the thickness of the third semiconductor zone (30) is greater than that of the second semiconductor zone (20), the thickness of the third semiconductor zone (30) being preferably greater than twice, or even three times, that of the second semiconductor zone (20).
    [8" id="c-fr-0008]
    8. Structure (1) according to any one of claims 1 to 7, in which the third semiconductor zone (30) has a band gap less than that of the semiconductor material having a band gap adapted to promote the absorption of electromagnetic radiation (λ) in which at least one of the first and second semiconductor zones (10, 20) is formed, the third semiconductor zones (30) preferably having a width of
    10 band gap less than that of the first, second, fourth and fifth semiconductor zone (10, 20, 40, 50).
    [9" id="c-fr-0009]
    9. Structure (1) according to any one of claims 1 to 8, in which the first and the second semiconductor zone (10, 20) are integrated into a
    15 semiconductor layer, the semiconductor layer comprising a first face and a second face, a first portion of the semiconductor layer extending from a part of the first face forming the first semiconductor zone (10), the rest of the layer semiconductor forming the second semiconductor zone (20).
    10. Structure (1) according to any one of claims 1 to 9, in which the third and fourth semiconductor zone (30, 40) integrated into a semiconductor layer, the semiconductor layer comprising a first portion forming the fourth semiconductor zone (40) and the rest of the semiconductor layer forming the third semiconductor zone (30).
    11. Structure (1) according to any one of claims 1 to 8, wherein each of the first to the fifth semiconductor zone (10, 20, 30, 40, 50) is formed by a respective semiconductor layer, the semiconductor zones (10, 20, 30, 40, 50) being brought into contact with one another by the faces of the layers
    30 semiconductors forming them.
    12. Structure (1) according to claim 11, in which at least part of the semiconductor layers forming first to fifth semiconductor zones (10, 20, 30, 40, 50) is delimited spatially by the walls of a mesa.
    13. Method for manufacturing a structure (1) of the avalanche photodiode type, the method being characterized in that it comprises the following steps:
    supply of a first semiconductor zone (10) of a first type of conductivity for which the majority carriers are the holes, and having
    [10" id="c-fr-0010]
    10 a first face intended to receive electromagnetic radiation (λ) and a second face opposite to the first face supplying a second semiconductor zone (20), called multiplication zone, the second semiconductor zone (20) having a concentration in majority carriers lower than that of the first semiconductor zone (10), said
    15 second semiconductor zone (20) being adapted to provide a multiplication of carriers by impact ionization which is preponderant for the electrons, the steps of supplying the first and second semiconductor zone (10, 20) being carried out so that the second semiconductor zone (20) is in contact with the second face of the first semiconductor zone (10), at least one of the first and
    The second semiconductor zone (10, 20) being formed in a semiconductor material having a forbidden bandwidth adapted to promote the absorption of electromagnetic radiation (λ), providing a third semiconductor zone (30) and a fifth semiconductor zone (50),
    25 - supply of a fourth semiconductor zone (40), called the collection zone, said fourth semiconductor zone (40) being of a second type of conductivity for which the majority carriers are the electrons, and having a concentration in majority carriers greater than that of the second semiconductor zone (20), in which the steps of supplying the third and fifth semiconductor zone (30, 50) being carried out so that the third and fifth semiconductor zones (30, 50) are arranged between the second semiconductor zone (20) and the fourth semiconductor zone (40), the third zone
    5 semiconductor (30) comprising a concentration of majority carriers lower than that of the absorption semiconductor zone and those of the fourth and fifth semiconductor zones (40, 50) and the fifth semiconductor zone (50) being of the second type of conductivity and with a concentration of majority carriers higher than that of the semiconductor multiplication zone so as to create
    10 in the third semiconductor zone (30) an electric field without multiplication of carriers by impact ionization.
    [11" id="c-fr-0011]
    14. The manufacturing method according to claim 13 wherein the step of supplying the first semiconductor zone (10) is prior to the steps of
    [12" id="c-fr-0012]
    15 providing the second, third, fourth and fifth semiconductor regions (20, 30, 40, 50) and wherein the respective successive steps of providing the second, fifth, third and fourth semiconductor regions (20 , 50, 30, 40) each consist of a step of forming said zone in contact with the zone
    [13" id="c-fr-0013]
    20 semiconductor previously formed, the second semiconductor region (20) being formed in contact with the first semiconductor region (10).
    15. The manufacturing method according to claim 13, in which the step of providing the fourth zone is prior to the steps of providing the first,
    [14" id="c-fr-0014]
    25 second, third and fifth semiconductor zone (20, 30, 40, 50) and in which the respective and successive stages of supply of the third, possibly fifth, second and first semiconductor zones (30, 50, 20, 10) each consist of a step of forming said zone in contact with the previously formed semiconductor zone, the third semiconductor zone being
    [15" id="c-fr-0015]
    30 formed in contact with the fourth semiconductor zone (40).
    S.59171
    O.OE + O 2.0E-11 4.0E-11 6.0E-11 8.0E-11 1.0E-11
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    同族专利:
    公开号 | 公开日
    EP3267493B1|2019-05-15|
    EP3267493A1|2018-01-10|
    FR3053837B1|2018-08-24|
    US10559706B2|2020-02-11|
    US20180013030A1|2018-01-11|
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    法律状态:
    2017-07-31| PLFP| Fee payment|Year of fee payment: 2 |
    2018-01-12| PLSC| Publication of the preliminary search report|Effective date: 20180112 |
    2018-07-27| PLFP| Fee payment|Year of fee payment: 3 |
    2019-07-31| PLFP| Fee payment|Year of fee payment: 4 |
    2021-04-09| ST| Notification of lapse|Effective date: 20210305 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1656581A|FR3053837B1|2016-07-08|2016-07-08|STRUCTURE OF THE PHOTODIODE TYPE AT AVALANCHE AND METHOD OF MANUFACTURING SUCH A STRUCTURE|
    FR1656581|2016-07-08|FR1656581A| FR3053837B1|2016-07-08|2016-07-08|STRUCTURE OF THE PHOTODIODE TYPE AT AVALANCHE AND METHOD OF MANUFACTURING SUCH A STRUCTURE|
    EP17179780.6A| EP3267493B1|2016-07-08|2017-07-05|Avalanche photodiode structure and method for manufacturing such a structure|
    US15/643,930| US10559706B2|2016-07-08|2017-07-07|Avalanche photodiode type structure and method of fabricating such a structure|
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